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Wednesday, 21 October 2015

Transistor RJP30H1DPD - Silicon N Channel IGBT High speed power switching

Transistor RJP30H1DPD - Silicon N Channel IGBT High speed power switching

60.000

Part No :  Transistor RJP30H1DPD (TO-252)

Electronic Manufacturer : Renesas Technology Corp

Electronics Description : Silicon N Channel IGBT High speed power switching
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